| PART |
Description |
Maker |
| BG312307 |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BG3123 BG3123R |
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| BF1009S |
Silicon N-Channel MOSFET Tetrode for ...
|
Infineon
|
| BF100507 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS AG
|
| BF998R |
From old datasheet system
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BF961 BF961A BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
|
| BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
|
Vishay
|
| BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
|
Vishay
|
